A 28nm 192.3TFLOPS/W Accurate/Approximate Dual-Mode-Transpose Digital 6T-SRAM CIM Macro for Floating-Point Edge Training and Inference

Yiyang Yuan, Bingxin Zhang, Yiming Yang, Yishan Luo, Qirui Chen, Shidong Lv, Hao Wu, Cailian Ma, Ming Li, Jinshan Yue, Xinghua Wang, Guozhong Xing, Pui In Mak, Xiaoran Li*, Feng Zhang*

*此作品的通讯作者

科研成果: 书/报告/会议事项章节会议稿件同行评审

4 引用 (Scopus)

摘要

SRAM CIM macros have been developed to enhance energy efficiency (EF) in edge-AI applications. However, most research has predominantly focused on inference [1-6], with relatively little exploration into the training process. Fine-tuning, during training, is critical for improving the accuracy of neural network models, which directly impacts the user experience. Unlike remote- or cloud-based training, on-device training offers advantages such as real-time response, power saving, and user-privacy protection. The training process primarily involves two phases: feed-forward (FF) and backpropagation (BP). The FF phase resembles the inference process, while BP phase requires the multiplication of the error gradient with the transposed weight matrix. Although several studies have introduced transpose CIM (T-CIM) to support both FF and BP [7-9], several challenges remain: (1) Previous work uses separate circuits for FF and BP, thereby diminishing area and energy efficiency due to lack off multiply-accumulate (MAC) circuit reuse; (2) Prior work is limited to integer (INT) formats; research indicates that INT representation can significantly reduce accuracy during training due to its lower resolution [10]. Fortunately, developments in pre-aligned FP-CIM schemes have been made [1,11,12], but these still suffer from accuracy losses due to mantissa truncation during the pre-alignment process. (3) Reliance on analog-CIM schemes leads to accuracy losses due to process, voltage, and temperature (PVT) variations, which further degrade training accuracy. Although digital CIMs (DCIM) can mitigate these issues, optimizing the tradeoffs between SRAM arrays and MAC circuits to simultaneously achieve high-memory density (MD) and area efficiency (AF) remains challenging [1]. Increasing the number of SRAM sub-bank rows and employing bit-parallel techniques can improve MD and AF [2], while approximate computing can enhance access speed and EF [3,4], as illustrated in Fig. 14.5.1.

源语言英语
主期刊名2025 IEEE International Solid-State Circuits Conference, ISSCC 2025
出版商Institute of Electrical and Electronics Engineers Inc.
258-260
页数3
ISBN(电子版)9798331541019
DOI
出版状态已出版 - 2025
活动72nd IEEE International Solid-State Circuits Conference, ISSCC 2025 - San Francisco, 美国
期限: 16 2月 202520 2月 2025

出版系列

姓名Digest of Technical Papers - IEEE International Solid-State Circuits Conference
ISSN(印刷版)0193-6530

会议

会议72nd IEEE International Solid-State Circuits Conference, ISSCC 2025
国家/地区美国
San Francisco
时期16/02/2520/02/25

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